Electric subbands in anIn0.65Ga0.35As quantum well betweenIn0.52Al0.48As andIn0.53Ga0.47As potential barriers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.12891/fulltext
Reference11 articles.
1. Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures
2. Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energetics
3. Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP
Cited by 36 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Beating patterns in the Shubnikov-de Haas oscillations originated from spin splitting in In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As heterostructures: Experiment and calculation;Physica E: Low-dimensional Systems and Nanostructures;2016-09
2. Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers;Acta Physica Sinica;2007
3. Growth temperature effects on the optical properties of Si modulation-doped InxGa1−xAs/InyAl1−yAs/InP heterostructures;Microelectronic Engineering;2000-05
4. Theoretical and experimental studies in n-type modulation-doped InxGa1−xAs/InyAl1−yAs/InP magnetic sensors;Journal of Applied Physics;1999-08
5. MAGNETOTRANSPORT STUDY IN SEMICONDUCTOR QUANTUM WELL SYSTEMS;Journal of Physics and Chemistry of Solids;1998-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3