Interpretation of the temperature dependence of the luminescence intensity, lifetime, and decay profiles in porous Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.11005/fulltext
Reference14 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. Picosecond Luminescence Decay in Porous Silicon
3. Ultrafast decay dynamics of luminescence in porous silicon
4. Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
5. Time-Resolved Luminescence Spectra of Porous Si
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