Intraband Auger processes and simple models of the ionization balance in semiconductor quantum-dot lasers-Reference-Cited by-同舟云学术

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Intraband Auger processes and simple models of the ionization balance in semiconductor quantum-dot lasers

Published:1994-04-15 Issue:16 Volume:49 Page:11272-11287
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pan Janet L.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.11272/fulltext

Reference35 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers

2. Multidimensional quantum well laser and temperature dependence of its threshold current

3. Threshold current density of GaInAsP/InP quantum-box lasers

4. Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain

5. Long-Wavelength Semiconductor Lasers

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1. Scattering in a quantum dot: the role of resonances;Journal of Physics: Condensed Matter;2013-07-09

2. Formulae for partial widths derived from the Lindblad equation;Physical Review A;2012-06-28

3. Analysis of carriers dynamics and laser emission in 1.55-μm InAs/InP(113)B quantum dot lasers;SPIE Proceedings;2010-04-30

4. INTRABAND AUGER EFFECT IN QUANTUM DOT STRUCTURES;International Journal of Modern Physics B;2009-05-20

5. Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures;Journal of Physics: Conference Series;2009-05-01

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