INTRABAND AUGER EFFECT IN QUANTUM DOT STRUCTURES

Abstract

Intraband photocurrent and absorption measurements were performed on InAs / InGaAlAs / InP quantum dot structures. To identify the optical transitions, theoretical calculations were performed and showed that the observed PC is generated by a bound to bound transition, where the final state is about 200 meV deep below the conduction band continuum. The reported results strongly suggest that an Auger process plays a fundamental role in generating the observed intraband photocurrent.