Negative-Uproperty of theDXcenter inAlxGa1−xAs:Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.1430/fulltext
Reference19 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Electron Localization by a Metastable Donor Level inn−GaAs: A New Mechanism Limiting the Free-Carrier Density
4. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
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1. Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se2;Journal of Applied Physics;2018-04-28
2. Bipolaron mechanism of DX center in AlxGa1-xAs:Si;Acta Physica Sinica;2010
3. Four-wave mixing spectroscopy of metastable centers in semiconductors;Journal of Applied Physics;2001-11-15
4. Multiconfigurate Character of the DX Center and Statistical Analysis of Transport Data in Si-Doped AlxGa1?xAs;physica status solidi (b);2001-10
5. Statistical analysis in the negative-U model of donors in AlxGa1−xAs:Si;Journal of Applied Physics;2000-09
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