Stress effects on excitons bound to neutral acceptors in InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.3438/fulltext
Reference25 articles.
1. On the origin of bound exciton lines in indium phosphide and gallium arsenide
2. Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in Si
3. Bound-exciton absorption in Si:Al, Si:Ga, and Si:In
4. Bound exciton luminescence in epitaxial Sn-doped gallium-arsenide
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