On the origin of bound exciton lines in indium phosphide and gallium arsenide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/7/i=7/a=031/pdf
Reference18 articles.
1. Light-emitting diodes
2. Bound exciton luminescence in epitaxial Sn-doped gallium-arsenide
3. Absorption and luminescence of excitons at neutral acceptors in gallium phosphide
4. Identification of donor species in high‐purity GaAs using optically pumped submillimeter lasers
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