Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1−xAs quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.4010/fulltext
Reference13 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Acceptor spectra ofAlxGa1−xAs-GaAs quantum wells in external fields: Electric, magnetic, and uniaxial stress
3. Shallow impurity levels in AlGaAs/GaAs semiconductor quantum wells
4. Binding energies of excited shallow acceptor states in GaAs/Ga1−xAlxAs quantum wells
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2. The effect of dielectric constant mismatch on the binding energy of hydrogenic impurities in cylindrical quantum wires;Physica E: Low-dimensional Systems and Nanostructures;2010-03
3. Magnetic field effect on photoionization cross-section of hydrogen-like impurity in cylindrical quantum wire;Physica E: Low-dimensional Systems and Nanostructures;2008-01
4. Binding energy and density of shallow impurity states in GaAs–(Ga, Al)As quantum wells: effects of an applied hydrostatic stress;Semiconductor Science and Technology;2003-06-11
5. Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma;Semiconductors;2002-02
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