Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma-Reference-Cited by-同舟云学术

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Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma

Published:2002-02 Issue:2 Volume:36 Page:203-207
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bumai Yu. A.,Gobsch G.,Goldhahn R.,Stein N.,Golombek A.,Nakov V.,Cheng T. S.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1453439.pdf

Reference20 articles.

1. S. J. Pearton, Mater. Sci. Forum 148/149, 393 (1994).

2. L. Pavesi, F. Martelli, D. Martin, and F. K. Reinhart, Appl. Phys. Lett. 54, 1522 (1989).

3. J. M. Zavada, F. Voillot, N. Lauert, et al., J. Appl. Phys. 73, 8489 (1993).

4. R. Fisher, G. Peter, E. O. Göbel, et al., Appl. Phys. Lett. 60, 2788 (1992).

5. Y.-L. Chang, I.-H. Tang, Y.-H. Zhang, et al., Appl. Phys. Lett. 62, 2697 (1993).

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1. Numerical simulation of hydrogenation of GaAs at the cooling stage;Semiconductors;2010-04

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