Strain-engineered widely tunable perfect absorption angle in black phosphorus from first principles
Author:
Funder
Naval Air Warfare Center, Weapons Division
U.S. Department of Defense
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.115307/fulltext
Reference71 articles.
1. Strain-Induced Gap Modification in Black Phosphorus
2. Effective Hamiltonians for phosphorene and silicene
3. Band parameters of phosphorene
4. Stacking sequences of black phosphorous allotropes and the corresponding few-layer phosphorenes
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