Author:
Deng 邓 Yafeng 亚丰,Zhang 张 Yilin 艺琳,Zhao 赵 Yafei 亚飞,Xu 徐 Yongkang 永康,Dai 代 Xingze 兴泽,Wang 王 Shuanghai 双海,Lu 陆 Xianyang 显扬,Li 黎 Yao 遥,Xu 徐 Yongbing 永兵,He 何 Liang 亮
Abstract
We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus (BP) using angle-resolved photoemission spectroscopy and density functional theory. The results show that there are band crossings in the Z–L (armchair) direction, but not in the Z–A (zigzag) direction. The corresponding dispersion-k distributions near the valence band maximum (VBM) exhibit quasi-linear or quadratic relationships, respectively. Along the armchair direction, the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of −16.2 meV/% strain. Conversely, the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/% strain. This work demonstrates an effective method for band engineering of bulk BP by uniaxial tensile strain, elucidates the mechanism behind it, and paves the way for strain-regulated optoelectronic devices based on bulk BP.