Changes of defect and active-dopant concentrations induced by annealing of highly Si-doped GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4482/fulltext
Reference33 articles.
1. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition
2. Effects of annealing on the carrier concentration of heavily Si‐doped GaAs
3. Si‐defect concentrations in heavily Si‐doped GaAs: Changes induced by annealing
4. Optical studies of heat‐treated Si‐doped GaAs bulk crystals
5. Infrared absorption bands induced by Si‐related defects in GaAs: Absorption cross sections
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