Suppression of competing tunneling processes in thermally-activated carrier emission on self-assembled InAs quantum dots
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.153308/fulltext
Reference19 articles.
1. Tunneling emission from self-organized In(Ga)As∕GaAs quantum dots observed via time-resolved capacitance measurements
2. Hole capture into self-organized InGaAs quantum dots
3. Charge-state dependence of InAs quantum-dot emission energies
4. Tunneling emission from self-assembled InAs quantum dots probed with capacitance transients
5. Charge-carrier statistics atInAs∕GaAsquantum dots
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2. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
3. Laplace deep level transient spectroscopy on self-assembled quantum dots;Journal of Applied Physics;2018-09-14
4. Temperature-independent slow carrier emission from deep-level defects in p-type germanium;Journal of Physics D: Applied Physics;2013-09-27
5. Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots;Journal of Physics D: Applied Physics;2013-07-26
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