Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.165306/fulltext
Reference42 articles.
1. The Schottky‐barrier height of the contacts between some rare‐earth metals (and silicides) andp‐type silicon
2. Low Schottky barrier of rare‐earth silicide onn‐Si
3. Contact reaction between Si and rare earth metals
4. Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts
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1. Formation of Nanometric Yttrium Silicides Layers onto Si (111) Substrate by Ion Implantation;Silicon;2020-10-17
2. Structural properties of the formation of yttrium germanides thin films on the Si(111) surface;Thin Solid Films;2009-06
3. First-principles calculations of the atomic and electronic properties of group IIIA disilicides in AlB2 type structures;Solid State Sciences;2008-03
4. First principles studies of adsorption of Pd, Ag, Pt, and Au on yttrium disilicide nanowires;Chemical Physics Letters;2008-03
5. First principles total energy calculations of the surface atomic structure of yttrium disilicide on Si(111);Surface Science;2008-01
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