First principles total energy calculations of the surface atomic structure of yttrium disilicide on Si(111)-Reference-Cited by-同舟云学术

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First principles total energy calculations of the surface atomic structure of yttrium disilicide on Si(111)

Published:2008-01 Issue:2 Volume:602 Page:644-649
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Cocoletzi Gregorio H.,de la Cruz Ma.T. Romero,Takeuchi Noboru

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference30 articles.

1. Total-energy calculations of semiconductor surface reconstructions

2. Epitaxial growth of rare‐earth silicides on (111) Si

3. Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

4. Role of silicon vacancies in yttrium-disilicide compounds from ab initio calculations

5. Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spectroscopic Analysis of Rare-Earth Silicide Structures on the Si(111) Surface;Materials;2021-07-23

2. Structural growth pattern of neutral and negatively charged yttrium-doped silicon clusters YSin0/− (n=6–20): from linked to encapsulated structures;RSC Advances;2019

3. Rare-earth silicide thin films on the Si(111) surface;Physical Review B;2016-05-06

4. Submonolayer Rare Earth Silicide Thin Films on the Si(111) Surface;High Performance Computing in Science and Engineering ´16;2016

5. First principles calculations of the adsorption and diffusion of Y on the Si(001)-c(4×2) surface;Surface Science;2009-12

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