Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Vacancy concentrations in binary rare-earth disilicides with the aluminum diboride structure
2. Epitaxial growth of rare‐earth silicides on (111) Si
3. A study of the formation of yttrium silicides epitaxially grown on Si(111)
4. Surface atomic structure determination of three-dimensional yttrium silicide epitaxially grown on Si(111)
5. Surface morphology of yttrium silicides epitaxially grown on Si(111) by STM
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1. Structure variations within RSi2 and R 2 TSi3 silicides. Part I. Structure overview;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2020-03-12
2. Effects of 1D disorder on the reciprocal space of rare-earth silicide/Si (1 1 1) epilayers;Applied Surface Science;2018-11
3. Investigation of GaN-based light-emitting diodes on various substrates;Gallium Nitride Materials and Devices XIII;2018-02-23
4. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
5. Does scandium resemble transition or rare earth metals when it is grown on silicon surfaces?;Journal of Applied Physics;2013-01-28
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