Hopping conduction and magnetoresistance of a GaAs/AlxGa1−xAs quantum well with embedded InAs dots
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.83.153304/fulltext
Reference17 articles.
1. Memory characteristics of InAs quantum dots embedded in GaAs quantum well
2. InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
3. Short range scattering effect of InAs quantum dots in the transport properties of two dimensional electron gas
4. DC hopping conduction by magnetically frozen electrons
5. Orbital magnetoconductance in the variable-range–hopping regime
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