Erbium in GaAs: Coupling with native defects
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.9477/fulltext
Reference17 articles.
1. Lattice location of erbium implanted into GaAs
2. Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition‐grown GaAs:Er
3. Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping
4. Erbium point defects in silicon
5. Pseudopotentials that work: From H to Pu
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3. Optically active erbium–oxygen complexes in GaAs;Applied Physics Letters;2004-03-08
4. Structure and electrical activity of rare-earth dopants in selected III-Vs;MRS Proceedings;2003
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