Optically active erbium–oxygen complexes in GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1668323
Reference18 articles.
1. Intra‐4f‐shell luminescence excitation and quenching mechanism of Yb in InP
2. Optically Induced Deexcitation of Rare-Earth Ions in a Semiconductor Matrix
3. Lattice location of erbium implanted into GaAs
4. Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition‐grown GaAs:Er
5. Lattice site location of thulium and erbium implanted GaAs
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