Binding energy of neutral bound excitons in GaAs-AlxGa1−xAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.1349/fulltext
Reference16 articles.
1. Bound excitons in Si‐doped GaAs/Al0.22Ga0.78As single quantum wells
2. Photoluminescence study of confined donors inGaAsAlxGa1−xAsquantum wells
3. Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier inAlxGa1−xAs/GaAs multiple-quantum-well structures
4. Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells
5. Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures
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