Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier inAlxGa1−xAs/GaAs multiple-quantum-well structures-Reference-Cited by-同舟云学术

Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier inAlxGa1−xAs/GaAs multiple-quantum-well structures

Published:1989-09-15 Issue:9 Volume:40 Page:6210-6217
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Reynolds D. C.,Leak C. E.,Bajaj K. K.,Stutz C. E.,Jones R. L.,Evans K. R.,Yu P. W.,Theis W. M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.6210/fulltext

Reference13 articles.

1. Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells

2. Sharp-line photoluminescence spectra from GaAs-GaAlAs multiple-quantum-well structures

3. Bound excitons in Si‐doped GaAs/Al0.22Ga0.78As single quantum wells

4. Photoluminescence study of confined donors inGaAsAlxGa1−xAsquantum wells

5. Binding energy of biexcitons and bound excitons in quantum wells

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