Carrier relaxation mechanisms in self-assembled(In,Ga)As∕GaAsquantum dots: EfficientP→SAuger relaxation of electrons
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.075403/fulltext
Reference53 articles.
1. Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
2. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
3. Exciton lifetime inInAs∕GaAsquantum dot molecules
4. Excitons, biexcitons, and trions in self-assembled(In,Ga)As∕GaAsquantum dots: Recombination energies, polarization, and radiative lifetimes versus dot height
5. Temperature Dependence of Excitonic Radiative Decay in CdSe Quantum Dots: The Role of Surface Hole Traps
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