Temperature-independent spin relaxation in heavily doped n -type germanium-Reference-Cited by-同舟云学术

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Temperature-independent spin relaxation in heavily doped n -type germanium

Published:2016-12-05 Issue:24 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Fujita Y.,Yamada M.,Yamada S.,Kanashima T.,Sawano K.,Hamaya K.

Funder

Cabinet Office, Government of Japan

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.245302/fulltext

Reference45 articles.

1. Electron Spin Resonance Experiments on Shallow Donors in Germanium

2. Electron Spin Resonance Experiments on Shallow Donors in Germanium

3. Some Features of ESR and Spin–Lattice Relaxation of Electrons in Ge and InSb with Different Donor Concentrations

4. Electron spin resonance in As-doped Ge in a wide range of impurity concentration

5. Spin relaxation of conduction electrons in highly doped semiconductors (InSb, Si, Ge)

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