Hall voltage dependence on inversion-layer geometry in the quantum Hall-effect regime
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.23.6610/fulltext
Reference6 articles.
1. New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
2. Solution of the Field Problem of the Germanium Gyrator
3. Der Geometrieeinfluß auf den Hall-Effekt bei rechteckigen Halbleiterplatten
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