Grain-boundary defects in laser-crystallized polycrystalline silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.12065/fulltext
Reference19 articles.
1. A full-color LCD addressed by poly-Si TFTs fabricated below 450 degrees C
2. Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors
3. Excimer-laser-annealed poly-Si thin-film transistors
4. Capillary waves in pulsed excimer laser crystallized amorphous silicon
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