Hydrogen-related defects in hydrogenated amorphous semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.1066/fulltext
Reference36 articles.
1. Defects in plasma-deposited a-Si: H
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3. Hydrogen evolution and defect creation in amorphous Si: H alloys
4. Preparation of highly photoconductive amorphous silicon by rf sputtering
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1. Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x;Journal of Alloys and Compounds;2018-09
2. Significant Improvement of Passivation Performance by Two-Step Preparation of Amorphous Silicon Passivation Layers in Silicon Heterojunction Solar Cells;Chinese Physics Letters;2017-03
3. Properties of a-SiGe Thin Films on Glass by Co-Sputtering for Photovoltaic Absorber Application;Journal of Nanoscience and Nanotechnology;2015-11-01
4. Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers;Applied Surface Science;2013-03
5. Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H);Journal of Non-Crystalline Solids;2012-06
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