Transport of ions during ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevE.54.938/fulltext
Reference13 articles.
1. A Monte Carlo computer program for the transport of energetic ions in amorphous targets
2. Monte Carlo calculation of one- and two-dimensional particle and damage distributions for ion-implanted dopants in silicon
3. Trajectory split method for Monte Carlo simulation of ion implantation
4. An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets
5. Calculation of channeling effects during ion implantation using the Boltzmann transport equation
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