First-principles ionized-impurity scattering and charge transport in doped materials-Reference-Cited by-同舟云学术

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First-principles ionized-impurity scattering and charge transport in doped materials

Published:2022-01-24 Issue:1 Volume:6 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Lu I-Te,Zhou Jin-Jian,Park Jinsoo^ORCID,Bernardi Marco^ORCID

Funder

Air Force Office of Scientific Research

U.S. Department of Energy

Lawrence Berkeley National Laboratory

National Energy Research Scientific Computing Center

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.6.L010801/fulltext

Reference50 articles.

1. Electron scattering by ionized impurities in semiconductors

2. Quantum Processes in Semiconductors

3. First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering

4. Efficient ab initio calculations of electron-defect scattering and defect-limited carrier mobility

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