In-plane Cr2N−CrN metal-semiconductor heterostructure with improved thermoelectric properties-Reference-Cited by-同舟云学术

In-plane Cr2N−CrN metal-semiconductor heterostructure with improved thermoelectric properties

Published:2021-11-22 Issue:11 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Biswas Bidesh^ORCID,Chakraborty Sourjyadeep^ORCID,Chowdhury Ongira,Rao Dheemahi^ORCID,Pillai Ashalatha Indiradevi Kamalasanan^ORCID,Bhatia Vijay^ORCID,Garbrecht Magnus^ORCID,Feser Joseph P.,Saha Bivas^ORCID

Funder

Jawaharlal Nehru Centre for Advanced Scientific Research

Board of Research in Nuclear Sciences

Department of Atomic Energy, Government of India

Australian Centre for Microscopy and Microanalysis, University of Sydney

University, and State and Federal Governments

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.114605/fulltext

Reference76 articles.

1. Multilayer thermionic refrigerator and generator

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4. Thermally stable epitaxial ZrN/carrier-compensated Sc0.99Mg0.01N metal/semiconductor multilayers for thermionic energy conversion

5. Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials

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