Thermally stable epitaxial ZrN/carrier-compensated Sc0.99Mg0.01N metal/semiconductor multilayers for thermionic energy conversion-Reference-Cited by-同舟云学术

Thermally stable epitaxial ZrN/carrier-compensated Sc0.99Mg0.01N metal/semiconductor multilayers for thermionic energy conversion

Published:2019-10-25 Issue:4 Volume:55 Page:1592-1602
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Garbrecht Magnus^ORCID,McCarroll Ingrid^ORCID,Yang Limei^ORCID,Bhatia Vijay^ORCID,Biswas Bidesh^ORCID,Rao Dheemahi^ORCID,Cairney Julie M.^ORCID,Saha Bivas^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-019-04127-x.pdf

Reference59 articles.

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5. Sai-Halasz GA, Tsu R, Esaki L (1977) A new semiconductor superlattice. Appl Phys Lett 30:651–653

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