Multifunctional Irradiation-Induced Defects for Enhancing Thermoelectric Properties of Scandium Nitride Thin Films-Reference-Cited by-同舟云学术

Multifunctional Irradiation-Induced Defects for Enhancing Thermoelectric Properties of Scandium Nitride Thin Films

Published:2022-05-20 Issue:6 Volume:5 Page:6847-6854
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Rao Dheemahi¹²,Chowdhury Ongira³^ORCID,Pillai Ashalatha Indiradevi Kamalasanan⁴,Pradhan Gopal K.⁵^ORCID,Sahoo Satyaprakash⁶⁷^ORCID,Feser Joseph Patrick³^ORCID,Garbrecht Magnus⁴,Saha Bivas¹²⁸^ORCID

Affiliation:

1. Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

2. International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

3. Department of Mechanical Engineering, University of Delaware, Newark, Delaware 19716, United States

4. Australian Centre for Microscopy and Microanalysis, The University of Sydney, Camperdown, NSW 2006, Australia

5. Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar 751024, Odisha, India

6. Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar 751005, India

7. Homi Bhabha National Institute, Mumbai 400094, India

8. School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India

Funder

Science and Engineering Research Board

Jawaharlal Nehru Centre for Advanced Scientific Research

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.2c00485

Reference54 articles.

1. GaN Technology for Power Electronic Applications: A Review

2. GaN, AlN, and InN: A review

3. Review—Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State Lighting

4. Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication

5. Next generation electronics on the ultrawide-bandgap aluminum nitride platform

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