Beyond thermodynamic defect models: A kinetic simulation of arsenic activation in CdTe
Author:
Funder
U.S. Department of Energy
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.2.103803/fulltext
Reference42 articles.
1. Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
2. Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
3. CdTe solar cells with open-circuit voltage breaking the 1 V barrier
4. In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy
5. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method
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