Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior-Reference-Cited by-同舟云学术

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Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

Published:2017-12-04 Issue:23 Volume:111 Page:232103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nagaoka Akira¹²,Kuciauskas Darius³^ORCID,Scarpulla Michael A.²

Affiliation:

1. Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan

2. Materials Science and Engineering and Electrical and Computer Engineering Departments, University of Utah, Salt Lake City, Utah 84112, USA

3. National Renewable Energy Laboratory (NREL), Golden, Colorado 80401, USA

Funder

JSPS Research Fellow

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4999011

Reference29 articles.

1. Solar cell efficiency tables (version 49)

2. Strategies to increase CdTe solar-cell voltage

3. Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency

4. The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells

5. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe

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