Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films-Reference-Cited by-同舟云学术

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Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe2 films

Published:2018-06-20 Issue:6 Volume:2 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Xu Cai-Zhi,Wang Xiaoxiong,Chen Peng,Flötotto David,Hlevyack Joseph Andrew,Lin Meng-Kai,Bian Guang,Mo Sung-Kwan,Chiang Tai-Chang

Funder

U.S. Department of Energy

National Science Foundation

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.2.064002/fulltext

Reference36 articles.

1. The electronic properties of graphene

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Emerging Photoluminescence in Monolayer MoS2

4. Characterization of collective ground states in single-layer NbSe2

5. Strongly enhanced charge-density-wave order in monolayer NbSe2

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1. Understanding the interlayer coupling in 1T/1H−NbSe2 heterobilayers;Physical Review B;2024-08-26

2. Optically Generated Spin Current in Two-Dimensional Metallic 2H-MX₂ (M = Nb and Ta and X= S and Se): Role of Anisotropic Spin Splitting;The Journal of Physical Chemistry C;2024-08-14

3. Charge density waves in two-dimensional transition metal dichalcogenides;Reports on Progress in Physics;2024-04-01

4. Converting the Bulk Transition Metal Dichalcogenides Crystal into Stacked Monolayers via Ethylenediamine Intercalation;Nano Letters;2023-10-30

5. The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity;Journal of Vacuum Science & Technology A;2023-06-08

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