Converting the Bulk Transition Metal Dichalcogenides Crystal into Stacked Monolayers via Ethylenediamine Intercalation-Reference-Cited by-同舟云学术

Converting the Bulk Transition Metal Dichalcogenides Crystal into Stacked Monolayers via Ethylenediamine Intercalation

Published:2023-10-30 Issue:21 Volume:23 Page:9733-9739
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Ahn Yeojin¹^ORCID,Lee Gyubin¹,Noh Namgyu²^ORCID,Lee Chulwan¹,Le Duc Duy¹,Kim Sunghun³^ORCID,Lee Yeonghoon⁴,Hyun Jounghoon¹^ORCID,Lim Chan-young¹,Cha Jaehun¹,Jho Mingi¹,Gim Seonggeon¹,Denlinger Jonathan D.⁵,Yang Chan-Ho¹^ORCID,Yuk Jong Min²^ORCID,Han Myung Joon¹^ORCID,Kim Yeongkwan¹^ORCID

Affiliation:

1. Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea

3. Department of Physics, Ajou University, Suwon 16499, Republic of Korea

4. Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

5. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Basic Energy Sciences

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c02268

Reference60 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. 2D transition metal dichalcogenides

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

5. Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

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