Self-organization of SiGe planar nanowires via anisotropic elastic field-Reference-Cited by-同舟云学术

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Self-organization of SiGe planar nanowires via anisotropic elastic field

Published:2019-02-12 Issue:2 Volume:3 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Liu Kailang,Berbezier Isabelle,Favre Luc,Ronda Antoine,David Thomas,Abbarchi Marco,Gaillard Philippe,Frisch Thomas,Croset Bernard,Aqua Jean-Noël

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.023403/fulltext

Reference51 articles.

1. Orientation Dependence of Strained-Ge Surface Energies near (001): Role of Dimer-Vacancy Lines and Their Interactions with Steps

2. Enhanced Relaxation and Intermixing in Ge Islands Grown on Pit-Patterned Si(001) Substrates

3. Coupled evolution of composition and morphology in a faceted three-dimensional quantum dot

4. Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules

5. Strain-Induced Formation of Fourfold Symmetric SiGe Quantum Dot Molecules

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system;Nanotechnology;2021-12-22

2. Phase-field study of surface diffusion enhanced break-ups of nanowire junctions;Journal of Applied Physics;2021-11-21

3. Thickness-dependent surface energy and formation of epitaxial quantum dots;Thin Solid Films;2020-11

4. Growth of Germanium Quantum Dots on Oxidized Silicon Surface;Russian Physics Journal;2020-06

5. When finite-size effects dictate the growth dynamics on strained freestanding nanomembranes;Nanoscale Advances;2020

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