Rate of field ionization fromSstates with a quantum defect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevA.23.1657/fulltext
Reference18 articles.
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1. Photoionization of semiconductor impurities in the presence of a static electric field;Physical Review B;1994-05-15
2. Electric Field Stimulated Emission of Electrons from Deep Traps in SiO2;Acta Physica Polonica A;1993-10
3. A new measurement method for trap properties in insulators and semiconductors: Using electric field stimulated trap‐to‐band tunneling transitions in SiO2;Journal of Applied Physics;1991-12
4. Coulombic and neutral trapping centers in silicon dioxide;Physical Review B;1991-01-15
5. On the Theory of Crystal Excitation of Electric Discharges II. Ionization of Defects;physica status solidi (b);1986-10-01
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