Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors-Reference-Cited by-同舟云学术

Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors

Published:2021-02-09 Issue:2 Volume:15 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Lee Yongjeong^ORCID,Jung Sungyeop^ORCID,Plews Andrew,Nejim Ahmed^ORCID,Simonetti Olivier^ORCID,Giraudet Louis^ORCID,Baranovskii Sergei D.,Gebhard Florian^ORCID,Meerholz Klaus,Jung Sungjune^ORCID,Horowitz Gilles^ORCID,Bonnassieux Yvan^ORCID

Funder

National Research Foundation of Korea

Ministry of Education

University of Cologne

Deutsche Forschungsgemeinschaft

FEDER

PhD fellowship from the École doctorale de l’Institut Polytechnique de Paris

Region Champagne-Ardenne

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.15.024021/fulltext

Reference89 articles.

1. Approaching disorder-free transport in high-mobility conjugated polymers

2. Comparing the Gate Dependence of Contact Resistance and Channel Resistance in Organic Field-Effect Transistors for Understanding the Mobility Overestimation Issue

3. Reliable inkjet contact metallization on printed polymer semiconductors for fabricating staggered TFTs

4. Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors

5. Modification of gold source and drain electrodes by self-assembled monolayer in staggered n- and p-channel organic thin film transistors

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