Optimization of Tungsten β -Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory
Author:
Funder
imec’s Industrial Affiliation Program on MRAM devices
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.16.064009/fulltext
Reference48 articles.
1. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
2. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection
3. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum
4. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction
5. Ultra-Fast Perpendicular Spin–Orbit Torque MRAM
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