Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters-Reference-Cited by-同舟云学术

Optical and Electronic Properties of Symmetric InAs/(In,Al,Ga)As/InP Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters

Published:2020-12-17 Issue:6 Volume:14 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Holewa P.^ORCID,Gawełczyk M.^ORCID,Maryński A.^ORCID,Wyborski P.^ORCID,Reithmaier J.P.^ORCID,Sęk G.^ORCID,Benyoucef M.^ORCID,Syperek M.^ORCID

Funder

National Science Centre

Ministry for Science and Higher Education

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.064054/fulltext

Reference62 articles.

1. High-performance semiconductor quantum-dot single-photon sources

2. Engineered quantum dot single-photon sources

3. Excitons in Asymmetric Nanostructures: Confinement Regime

4. Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band

5. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

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