Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky-Barrier Devices
Author:
Funder
Agency for Science, Technology and Research
A*STAR QTE
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.14.054027/fulltext
Reference54 articles.
1. The physics and chemistry of the Schottky barrier height
2. Electron transport at metal-semiconductor interfaces: General theory
3. Transport Properties of Inhomogeneous Schottky Contacts
4. Barrier inhomogeneities at Schottky contacts
5. Physics of Semiconductor Devices
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quaternary functional semiconductor devices;Physica Scripta;2024-06-13
2. Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode;Journal of Vacuum Science & Technology B;2024-06-07
3. Comparison of Electrical Conductivity and Schottky Behavior of 4‐[2‐(9‐anthryl)vinyl]pyridine Based Two 1D Coordination Polymers of Zn(II) and Cd(II);European Journal of Inorganic Chemistry;2024-05-23
4. An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions;ACS Applied Materials & Interfaces;2024-04-22
5. Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer;Materials Today Communications;2024-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3