Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide-Reference-Cited by-同舟云学术

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Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

Published:2017-06-16 Issue:6 Volume:7 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Wang Junfeng,Zhou Yu,Zhang Xiaoming,Liu Fucai,Li Yan,Li Ke,Liu Zheng,Wang Guanzhong,Gao Weibo

Funder

National Research Foundation Singapore

Ministry of Education - Singapore

Nanyang Technological University

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.7.064021/fulltext

Reference39 articles.

1. Room temperature coherent control of defect spin qubits in silicon carbide

2. Polytype control of spin qubits in silicon carbide

3. Coherent control of single spins in silicon carbide at room temperature

4. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

5. Electron spin decoherence in silicon carbide nuclear spin bath

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