New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes-Reference-Cited by-同舟云学术

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Published:2017-10-23 Issue:4 Volume:7 Page:
ISSN:2160-3308
Container-title:Physical Review X
language:en
Short-container-title:Phys. Rev. X

Author:

Encomendero Jimy,Faria Faiza Afroz,Islam S. M.,Protasenko Vladimir,Rouvimov Sergei,Sensale-Rodriguez Berardi,Fay Patrick,Jena Debdeep,Xing Huili Grace

Funder

Office of Naval Research

National Science Foundation

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevX.7.041017/fulltext

Reference53 articles.

1. Tunneling in a finite superlattice

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4. Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

5. Development and future prospects of terahertz technology

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