<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>f</mml:mi></mml:mrow></mml:math> electron temperature driven ultrafast electron localization-Reference-Cited by-同舟云学术

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4f electron temperature driven ultrafast electron localization

Published:2024-04-29 Issue:2 Volume:6 Page:
ISSN:2643-1564
Container-title:Physical Review Research
language:en
Short-container-title:Phys. Rev. Research

Author:

Yamagami Kohei^ORCID,Ueda Hiroki^ORCID,Staub Urs^ORCID,Zhang Yujun^ORCID,Yamamoto Kohei,Park Sang Han^ORCID,Kwon Soonnam^ORCID,Mitsuda Akihiro^ORCID,Wada Hirofumi^ORCID,Uozumi Takayuki,Mimura Kojiro^ORCID,Wadati Hiroki^ORCID

Funder

Ministry of Science and ICT, South Korea

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Horizon 2020

National Centers of Competence in Research in Molecular Ultrafast Science and Technology

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevResearch.6.023099/fulltext

Reference50 articles.

1. Valence fluctuation phenomena

2. Critical evaluation of Eu valences fromLIII-edge x-ray-absorption and Mössbauer spectroscopy ofEuNi2Si2−xGex

3. Thermal Expansion and Electrical Resistivity of EuNi2(Si1-xGex)2

4. Temperature-dependent Eu3d−4fx-ray absorption and resonant photoemission study of the valence transition inEuNi2(Si0.2Ge0.8)2

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1. 4f electron temperature driven ultrafast electron localization;Physical Review Research;2024-04-29

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