General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.180.773/fulltext
Reference37 articles.
1. Diffusion of Donor and Acceptor Elements into Germanium
2. Diffusion of Boron and Phosphorus into Silicon
3. Diffusion of Donor and Acceptor Elements in Silicon
4. Diffusion of Impurities in Germanium
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