Displaced Maxwellian Calculation of Transport inn-Type GaAs
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRev.178.1319/fulltext
Reference18 articles.
1. High-Field Transport inn- Type GaAs
2. Calculation of the velocity-field characteristic for gallium arsenide
3. High-field distribution function in GaAs
4. Monte Carlo calculation of the velocity-field relationship for gallium arsenide
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1. High-power picosecond pulse amplification and generation in field-effect GaAs-AlGaAs laser diodes with saturable absorption;IEEE Journal of Quantum Electronics;1994
2. A field-effect GaAs laser diode with controlled carrier distribution in central and satellite valleys;IEEE Photonics Technology Letters;1992-09
3. Correct form of energy-balance equation for intervalley and intersubband scattering in semiconductors;Physical Review B;1979-04-15
4. Acoustic mobility and nonparabolicity in semiconductors;Lettere Al Nuovo Cimento Series 2;1975-08
5. Nonsaturating velocity‐field characteristic of gallium arsenide experimentally determined from domain measurements;Journal of Applied Physics;1974-07
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