Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering-Reference-Cited by-同舟云学术

Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering

Published:2014-12-22 Issue:6 Volume:2 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Felici Marco,Birindelli Simone,Trotta Rinaldo,Francardi Marco,Gerardino Annamaria,Notargiacomo Andrea,Rubini Silvia,Martelli Faustino,Capizzi Mario,Polimeni Antonio

Funder

Sapienza Università di Roma

European Union

Italian Ministry for Education, University and Research

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.2.064007/fulltext

Reference57 articles.

1. Non-destructive determination of local strain with 100-nanometre spatial resolution

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3. Coherent X-ray diffraction imaging of strain at the nanoscale

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