Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>h</mml:mi></mml:math> - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>BN</mml:mi></mml:math> /graphene heterostructure-Reference-Cited by-同舟云学术

Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated h - BN /graphene heterostructure

Published:2024-08-30 Issue:2 Volume:22 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Kerjouan Romaine¹²^ORCID,Rosticher Michael¹²,Pierret Aurélie¹²,Watanabe Kenji³^ORCID,Taniguchi Takashi³^ORCID,Dhillon Sukhdeep¹²,Ferreira Robson¹²,Dolfi Daniel⁴,Goerbig Mark⁵,Plaçais Bernard¹²^ORCID,Mangeney Juliette¹²^ORCID

Affiliation:

1. Laboratoire de Physique de l’Ecole Normale Supérieure (ENS), Université Paris Sciences et Lettres (PSL)

2. Université de Paris

3. National Institute for Materials Science

4. Thales Research & Technology, Thales Group

5. Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay

Funder

European Research Council

French National Research Agency

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.22.024076/fulltext

Reference58 articles.

1. Electron dynamics in strained graphene

2. Strain engineering of graphene: a review

3. Lattice-corrected strain-induced vector potentials in graphene

4. Graphene Quantum Strain Transistors

5. Toward an Accurate Tight-Binding Model of Graphene’s Electronic Properties under Strain

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1. Quantum transport signature of strain-induced scalar and pseudovector potentials in a crenelated h - BN /graphene heterostructure;Physical Review Applied;2024-08-30