Enhancing antiferromagnetic anisotropic magnetoresistance by substitutional doping-Reference-Cited by-同舟云学术

Enhancing antiferromagnetic anisotropic magnetoresistance by substitutional doping

Published:2024-05-22 Issue:5 Volume:21 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Yuan Xiaojuan¹^ORCID,Zhang Zhenhua²,Li Rongxin³,Li Qifeng¹^ORCID,Lai Hengguo¹,Song Yanrong¹,Liu Yong¹^ORCID,Xu Zihan¹,Lu Zhihong¹^ORCID,Xiong Rui¹^ORCID,Zhang Wenbing¹^ORCID

Affiliation:

1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China

2. The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China

3. School of Microelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.054045/fulltext

Reference35 articles.

1. Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

2. Room-temperature antiferromagnetic memory resistor

3. Current-controlled antiferromagnetic memory

4. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

5. Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet: A Systematic Analysis

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1. Enhancing antiferromagnetic anisotropic magnetoresistance by substitutional doping;Physical Review Applied;2024-05-22