Gate-Controlled Large Resistance Switching Driven by Charge-Density Wave in 1T−TaS2/2H−MoS2 Heterojunctions-Reference-Cited by-同舟云学术

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Gate-Controlled Large Resistance Switching Driven by Charge-Density Wave in 1T−TaS2/2H−MoS2 Heterojunctions

Published:2019-02-12 Issue:2 Volume:11 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Mahajan Mehak,Murali Krishna,Kawatra Nikhil,Majumdar Kausik

Funder

Indian Space Research Organization

Nano

Department of Science and Technology

MHRD

MeitY

DST Nano Mission

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.11.024031/fulltext

Reference54 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Two-dimensional flexible nanoelectronics

4. Charge‐Density‐Wave Conductors

5. The dynamics of charge-density waves

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1. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides;Chemical Reviews;2024-03-01

2. Novel electrodes and gate dielectrics for field‐effect transistors based on two‐dimensional materials;Bulletin of the Korean Chemical Society;2023-03

3. Atomic layer deposition (ALD)-constructed TaS₂ nanoflakes for cancer-related nucleolin detection;Nanotechnology;2023-02-10

4. Charge‐Density Wave Driven Giant Thermionic‐Current Switching in 1T‐TaS ₂ /2H‐TaSe ₂ /2H‐MoS ₂ Heterostructure;Advanced Electronic Materials;2022-09-18

5. Fermi‐Level Pinning‐Free WSe ₂ Transistors via 2D Van der Waals Metal Contacts and Their Circuits;Advanced Materials;2022-04-04

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